IRLZ44NPBF 查看數據表（PDF） - International Rectifier

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IRLZ44NPBF

HEXFET® Power MOSFET

International Rectifier 

1000

100

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.0V

2.5V

10

1

0.1

2.5V

20µs PULSE WIDTH

TJ = 25°C

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

TJ = 25°C

100

TJ = 175°C

10

V DS= 25V

20µs PULSE WIDTH

1

A

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

IRLZ44NPbF

1000

100

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.0V

2.5V

10

2.5V

20µs PULSE WIDTH

1

TJ = 175°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.0

ID = 41A

2.5

2.0

1.5

1.0

0.5

0.0

VGS = 10V

A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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