IRLZ44NPBF 查看數據表（PDF） - International Rectifier

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IRLZ44NPBF

HEXFET® Power MOSFET

International Rectifier 

IRLZ44NPbF

2800

2400

2000

Ciss

VGS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

1600

1200

Coss

800

Crss

400

0

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

100

TJ = 175°C

TJ = 25°C

10

0.4

VGS = 0V A

0.8

1.2

1.6

2.0

2.4

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

15

I D = 25A

12

VDS = 44V

VDS = 28V

9

6

3

FOR TEST CIRCUIT

SEE FIGURE 13

0

A

0

10

20

30

40

50

60

70

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10µs

100µs

10

1ms

TC = 25°C

TJ = 175°C

Single Pulse

1

10ms

A

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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