TC7MPN3125FTGEB 查看數據表（PDF） - Toshiba

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TC7MPN3125FTGEB

TOSHIBA Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC7MPN3125FTG

DC Characteristics (1.65 V ≤ VCCA < 2.3 V, 2.3 V ≤ VCCB ≤ 2.7 V)

Characteristics

H-level input voltage

L-level input voltage

H-level output voltage

L-level output voltage

3-state output OFF state current

Input leakage current

Power-off leakage current

Quiescent supply current

Symbol

Test Condition

Ta = −40 to 85°C

VCCA (V) VCCB (V)

Unit

Min Max

VIHA DIR, OE , An

VIHB Bn

1.65 to 2.3 2.3 to 2.7

0.65 ×

VCCA

⎯

V

1.65 to 2.3 2.3 to 2.7 1.6

⎯

VILA DIR, OE , An

VILB Bn

1.65 to 2.3 2.3 to 2.7

⎯

0.35 ×

VCCA

V

1.65 to 2.3 2.3 to 2.7 ⎯

0.7

VOHA

IOHA = −100 μA 1.65 to 2.3 2.3 to 2.7

VCCA

− 0.2

⎯

IOHA = −3 mA

1.65 2.3 to 2.7 1.25 ⎯

VIN = VIH or VIL

V

VOHB

IOHB = −100 μA 1.65 to 2.3 2.3 to 2.7

VCCB

− 0.2

⎯

IOHB = −2 mA 1.65 to 2.3 2.3

1.7

⎯

IOLA = 100 μA 1.65 to 2.3 2.3 to 2.7 ⎯

0.2

VOLA

IOLA = 3 mA

1.65 2.3 to 2.7 ⎯

0.3

VIN = VIH or VIL

V

IOLB = 100 μA 1.65 to 2.3 2.3 to 2.7 ⎯

0.2

VOLB

IOLB = 2 mA 1.65 to 2.3 2.3

⎯

0.6

IOZA

IOZB

VIN = VIH or VIL

VOUT = 0 to 3.6 V

VIN = VIH or VIL

VOUT = 0 to 3.6 V

1.65 to 2.3 2.3 to 2.7 ⎯ ±2.0

μA

1.65 to 2.3 2.3 to 2.7 ⎯ ±2.0

IIN VIN (DIR, OE ) = 0 to 3.6 V

1.65 to 2.3 2.3 to 2.7 ⎯ ±1.0 μA

IOFF1

IOFF2

VIN, VOUT = 0 to 3.6 V

0

0

1.65 to 2.3

0

⎯

2.0

⎯

2.0

μA

IOFF3

ICCA

ICCB

VINA = VCCA or GND

VINB = VCCB or GND

VINA = VCCA or GND

VINB = VCCB or GND

1.65 to 2.3 Open

⎯

2.0

1.65 to 2.3 2.3 to 2.7 ⎯

2.0

μA

1.65 to 2.3 2.3 to 2.7 ⎯

2.0

ICCA

ICCB

VCCA ≤ (VIN, VOUT) ≤ 3.6 V

VCCB ≤ (VIN, VOUT) ≤ 3.6 V

1.65 to 2.3 2.3 to 2.7 ⎯ ±2.0

μA

1.65 to 2.3 2.3 to 2.7 ⎯ ±2.0

10

2007-10-19

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