TC7MP245FTG 查看數據表（PDF） - Toshiba

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TC7MP245FTG

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC7MP245FK/FTG

AC Characteristics (Ta=-40 to 85℃,Input: tr=tf=2.0ns,CL=30pF ,RL=500Ω)

Parameter

Symbol

Propagation delay time

tpLH

tpHL

3-state output enable time

tpZL

tpZH

3-state output disable time

tpLZ

tpHZ

Output to output skew

tosLH

tosHL

Test Condition

Vcc(V)

Min

1.8±0.15

1.0

Figure 1, Figure 2

2.5±0.2

0.8

3.3±0.3

0.6

1.8±0.15

1.0

Figure 1, Figure 3

2.5±0.2

0.8

3.3±0.3

0.6

1.8±0.15

1.0

Figure 1, Figure 3

2.5±0.2

0.8

3.3±0.3

0.6

1.8±0.15

-

(Note) 2.5±0.2

-

3.3±0.3

-

For CL=50pF, add approximately 300ps to the AC maximum specification.

Note: Parameter guaranteed by design.

(tosLH=|tpLHm-tpLHn|, tosHL=|tpHLm-tpHLn|)

Max

Unit

10.0

4.6

ns

3.0

15.0

7.8

ns

5.6

6.5

4.3

ns

3.9

0.5

0.5

ns

0.5

Capacitive Characteristics(Ta=25℃)

Characteristics

Symbol

Test Condition

Vcc(V)

Typ.

Unit

Input capacitance

CIN

1.8,2.5,3.3

6

pF

Bus I/O capacitance

CI/O

1.8,2.5,3.3

7

pF

Power dissipation

OE=“L”,finA=100MHz Table 1 (Note)

20

pF

capacitance

CPDA

1.8,2.5,3.3

(A bus input)

OE=“H”,finA=100MHz Table 1 (Note)

0

pF

Power dissipation

OE=“L”,finB=100MHz Table 1 (Note)

16

pF

capacitance

CPDB

1.8,2.5,3.3

(B bus input)

OE=“H”,finB=100MHz Table 1 (Note)

1

pF

Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation.

ICC(opr) =CPD・VCC・VIN+ICC/8(per bit)

7

2007-10-19

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