NLAS44599MNR2G 查看數據表（PDF） - ON Semiconductor
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NLAS44599MNR2G Datasheet PDF : 13 Pages
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NLAS44599
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
VIH
Minimum High−Level Input
2.0
Voltage, Select Inputs
2.5
3.0
4.5
5.5
VIL
Maximum Low−Level Input
2.0
Voltage, Select Inputs
2.5
3.0
4.5
5.5
IIN
Maximum Input Leakage
VIN = 5.5 V or GND
5.5
Current
IOFF
Power Off Leakage Current, VIN = 5.5 V or GND
0
Select Inputs
ICC
Maximum Quiescent Supply
Select and VIS = VCC or GND
5.5
Current
Guaranteed Limit
*555C to 255C t855C t1255C Unit
1.5
1.5
1.5
V
1.9
1.9
1.9
2.1
2.1
2.1
3.15
3.15
3.15
3.85
3.85
3.85
0.5
0.5
0.5
V
0.6
0.6
0.6
0.9
0.9
0.9
1.35
1.35
1.35
1.65
1.65
1.65
$0.2
$2.0 $2.0 mA
$10
$10 $10 mA
4.0
4.0
8.0
mA
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Symbol
RON
Parameter
Maximum “ON” Resistance
(Figures 17 − 23)
Condition
VIN = VIL or VIH
VIS = GND to VCC
IINI v 10.0 mA
VCC *555C to 255C t855C t1255C Unit
2.5
85
95
105
W
3.0
45
50
55
4.5
30
35
40
5.5
25
30
35
RFLAT (ON) ON Resistance Flatness
(Figures 17 − 23)
VIN = VIL or VIH
IINI v 10.0 mA
VIS = 1 V, 2 V, 3.5 V
4.5
4
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 9)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1
ICOM(ON) COM ON Leakage Current
VIN = VIL or VIH
5.5
1
(Figure 9)
VNO 1.0 V or 4.5 V with VNC floating or
VNO 1.0 V or 4.5 V with VNO floating
VCOM = 1.0 V or 4.5 V
4
5
W
10
100 nA
10
100 nA
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