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NLAS44599MNR2G 查看數據表(PDF) - ON Semiconductor

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NLAS44599MNR2G Datasheet PDF : 13 Pages
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NLAS44599
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit
Symbol
Parameter
Test Conditions
VCC VIS *555C to 255C
t855C
t1255C
(V) (V) Min Typ* Max Min Max Min Max Unit
tON
TurnOn Time
(Figures 12 and 13)
RL = 300 W, CL = 35 pF 2.5 2.0 5 23 35 5 38 5 41 ns
(Figures 5 and 6)
3.0 2.0 5 16 24 5 27 5 30
4.5 3.0 2 11 16 2 19 2 22
5.5 3.0 2 9 14 2 17 2 20
tOFF
TurnOff Time
(Figures 12 and 13)
RL = 300 W, CL = 35 pF 2.5 2.0 1
(Figures 5 and 6)
3.0 2.0 1
4.5 3.0 1
5.5 3.0 1
7 12 1 15 1 18 ns
5 10 1 13 1 16
4 6 1 9 1 12
3 5 1 8 1 11
tBBM
Minimum BreakBeforeMake
VIS = 3.0 V (Figure 4)
2.5 2.0 1 12
1
1
ns
Time
RL = 300 W, CL = 35 pF 3.0 2.0 1 11
1
1
4.5 3.0 1 6
1
1
5.5 3.0 1 5
1
1
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
pF
8
10
10
20
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
BW
Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response (Figure 11)
VONL Maximum Feedthrough On Loss
VISO OffChannel Isolation (Figure 10)
Q
Charge Injection Select Input to
Common I/O (Figure 15)
THD
VCT
Total Harmonic Distortion THD +
Noise (Figure 14)
ChanneltoChannel Crosstalk
Condition
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 7)
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 7)
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 W, CL = 1000 pF
Q = CL * DVOUT
(Figure 8)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 5.0 VPP sine wave
f = 100 kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
VCC Typical
V
255C Unit
3.0
145
MHz
4.5
170
5.5
175
3.0
3
dB
4.5
3
5.5
3
3.0
93
dB
4.5
93
5.5
93
pC
3.0
1.5
5.5
3.0
%
5.5
0.1
dB
5.5
90
3.0
90
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