P62NS04Z 查看數據表（PDF） - STMicroelectronics

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P62NS04Z

N-channel clamped 12.5mΩ- 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET

STMicroelectronics 

STP62NS04Z

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

ID

Drain current (continuous) at TC = 25°C

ID

Drain current (continuous) at TC=100°C

IDG

Drain gate current (continuous)

IGS

IDM(1)

Gate sourcecurrent (continuous)

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (2) Peak diode recovery voltage slope

EAS (3) Single Pulse Avalanche Energy

VESD ESD (HBM - C = 100pF, R = 1.5 kΩ)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

3. Starting TJ = 25 oC, ID = 20A, VDD = 20V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

Clamped

Clamped

62

37.5

± 50

± 50

248

110

0.74

8

500

8

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

V

°C

Value

1.36

62.5

300

Unit

°C/W

°C/W

°C

3/12

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