P62NS04Z 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
比赛名单
P62NS04Z
STMicroelectronics
P62NS04Z Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STP62NS04Z
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16V
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10V
Gate-Source
VGSS Breakdown Voltage
IGS = 100 µA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
Min. Typ. Max. Unit
33
V
10 µA
10 µA
18
V
2
4
V
12.5 15 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 20V, ID = 40A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 20V, ID= 20A,
RG=4.7Ω, VGS = 10V
Figure 13 on page 8
Vclamp = 30V, ID = 40A
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
20
S
1330
pF
420
pF
135
pF
34 47 nC
10
nC
11.5
nC
Min. Typ. Max. Unit
13
ns
104
ns
41
ns
42
ns
30
ns
54
ns
90
ns
4/12
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