F12N10L 查看數據表（PDF） - Fairchild Semiconductor
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F12N10L Datasheet PDF : 6 Pages
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RFP12N10L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
100 OPERATION IN THIS
REGION IS LIMITED
BY rDS(ON)
TC = 25oC
TJ = MAX RATED
ID(MAX) CONTINUOUS
10
DC OPERATION
1
60W
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 2. FORWARD BIAS OPERATING AREA
40
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
TC = 25oC
30
20
VGS = 10V
5V
4V
10
3V
2V
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. SATURATION CHARACTERISTICS
20
VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
15
-40oC
25oC
10
125oC
5
125oC
-40oC
0
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 4. TRANSFER CHARACTERISTICS
0.3
125oC
0.2
25oC
-40oC
0.1
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
2.0
VGS = 5V, ID = 12A
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5%
1.5
1.0
0.5
0
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFP12N10L Rev. B
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