SSM9972GI 查看數據表（PDF） - Silicon Standard Corp.
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SSM9972GI Datasheet PDF : 5 Pages
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SSM9972GI
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/∆ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
VGS=0V, ID= 250uA
Reference to 25°C, ID=1mA
VGS=10V, ID=23A
VGS=4.5V, ID=12A
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=23A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V, Tj = 150°C
VGS=±25V
ID=23A
VDS=48V
VGS=4.5V
VDS=30V
ID=35A
RG=3.3Ω , VGS=10V
RD=0.86Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate resistance
f=1.0MHz
Min. Typ. Max. Units
60 -
-
V
- 0.06 - V/°C
-
- 18 mΩ
-
- 22 mΩ
1
-
3V
- 40 -
S
-
- 10 uA
-
- 25 uA
-
- ±100 nA
- 35 56 nC
- 9.5 - nC
- 20 - nC
- 12 - ns
- 37 - ns
- 47 - ns
- 59
- ns
- 3160 5060 pF
- 280 - pF
- 230 - pF
- 1.6 2.4 Ω
Source-Drain Diode
Symbol
VSD
t rr
Q rr
Parameter
Forward voltage 2
Reverse recovery time
Reverse recovery charge
Test Conditions
IS= 23A, VGS=0V
IS=23A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 36 - ns
- 45 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/20/2006 Rev.3.1
www.SiliconStandard.com
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