SSM9972GI 查看數據表（PDF） - Silicon Standard Corp.

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比赛名单

SSM9972GI

N-channel Enhancement-mode Power MOSFET

Silicon Standard Corp. 

120

10V

7.0V

90

T C =25 o C

5.0V

60

4.5V

30

V G =3.0V

0

0

2

4

6

8

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20

I D = 12 A

T C =25 o C

18

16

14

2

4

6

8

10

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

20

120

T C = 150 o C

90

60

SSM9972GI

10V

7.0V

5.0V

4.5V

30

V G =3.0V

0

0

2

4

6

8

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

I D =23A

1.4

V G =10V

1.2

1.0

0.8

0.6

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

vs. Junction Temperature

1.7

15

T j =150 o C

T j =25 o C

1.2

10

0.7

5

0

0

0.2

0.4

0.6

0.8

1

1.2

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

0.2

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage vs.

Junction Temperature

9/20/2006 Rev.3.1

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