6R520E6(2014) 查看數據表（PDF） - Infineon Technologies

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6R520E6
(Rev.:2014)

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

600V CoolMOS" E6 Power Transistor

IPx60R520E6

Electrical characteristics

Table 7 Gate charge characteristics

Parameter

Symbol

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Qgs

Qgd

Qg

Vplateau

Min.

-

-

-

-

Table 8 Reverse diode characteristics

Parameter

Symbol

Diode forward voltage

VSD

Min.

-

Reverse recovery time

trr

-

Reverse recovery charge

Qrr

-

Peak reverse recovery current

Irrm

-

Values

Typ.

2.8

12

23.4

5.4

Max.

-

-

-

-

Values

Typ.

0.9

Max.

-

260

-

2.5

-

18

-

Unit

nC

Note /

Test Condition

VDD=480 V, ID=3.5A,

VGS=0 to 10 V

V

Unit

V

ns

µC

A

Note /

Test Condition

VGS=0 V, IF=3.5A,

Tj=25 °C

VR=400 V, IF=3.5A,

diF/dt=100 A/µs

(see table 22)

Final Data Sheet

7

Rev. 2.02, 20104-0142-0190

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