BU407H 查看數據表（PDF） - Inchange Semiconductor

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BU407H

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU407H

DESCRIPTION

·High Voltage: VCEV= 330V(Min)

·Fast Switching Speed-

: tf= 750ns(Max)

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 5A

APPLICATIONS

·Designed for use in horizontal deflection output stages

of TV’s and CRT’s

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

330

V

VCEV

Collector-Emitter Voltage

330

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICP

Collector Current-Peak Repetitive

10

A

ICP

Collector Current- Peak (10ms)

15

A

IBB

Base Current

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

4

A

60

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.08 ℃/W

70 ℃/W

isc Website：www.iscsemi.cn

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