BU407H 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

比赛名单

BU407H

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU407H

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.8A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 5A; IB=B 0.8A

VCE= 330V; VBE= 0

VCE= 200V; VBE= 0

VEB= 6V; IC=0

fT

Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

tf

Fall Time

IC= 5A; IBend= 0.8A, VCC= 40V

150

V

1.0 V

1.2 V

5.0

0.1

mA

1.0 mA

10

MHz

80

pF

0.75 μs

isc Website：www.iscsemi.cn

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