4N40 查看數據表（PDF） - Inchange Semiconductor

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4N40

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

4N40

·FEATURES

·Drain Current ID= 4A@ TC=25℃

·Drain Source Voltage-

: VDSS= 400V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 2.1Ω(Max)

·Fast Switching

·APPLICATIONS

·Switch mode power supply.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

400

V

±30

V

ID

Drain Current-Continuous

4

A

IDM

Drain Current-Single Plused

10

A

PD

Total Dissipation @TC=25℃

75

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

2.0 ℃/W

isc website：www.iscsemi.cn

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