4N40 查看數據表（PDF） - Inchange Semiconductor
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4N40 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N40
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 4A ;VGS= 0
VGS= 10V; ID= 2A
VGS= ±30V;VDS= 0
VDS=400V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=4.0A;
VDD=200V;
RG=25Ω
MIN TYPE MAX UNIT
400
V
2.0
4.0
V
1.4
V
2.1
Ω
±100 nA
1
µA
750
100 pF
150
60
45
ns
100
200
·
isc website：www.iscsemi.cn
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