SFP9640L 查看數據表（PDF） - Fairchild Semiconductor

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SFP9640L

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

SFP9640L

FEATURES

❑ Avalanche Rugged Technology

❑ Rugged Gate Oxide Technology

❑ Lower Input Capacitances

❑ Improved Gate Charge

❑ Extended Safe Operating Area

❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V

❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25℃)

Continuous Drain Current (TC=100℃)

Drain Current-Pulsed

①

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

②

Avalanche Current

①

Repetitive Avalanche Energy

①

Peak Diode Recovery dv/dt

③

Total Power Dissipation (TC=25℃)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

Thermal Resistance

Symbol

RθJC

RθCS

RθJA

Characteristic

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

BVDSS = -200 V

RDS(on) = 0.5Ω

ID = -11 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

Value

-200

-11

-7.5

-44

±20

806

-11

9.8

-5.0

98

0.78

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/℃

℃

Typ.

--

0.5

--

Max.

1.27

--

62.5

Units

℃/W

Rev. A

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