SFP9640L 查看數據表（PDF） - Fairchild Semiconductor
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SFP9640L Datasheet PDF : 7 Pages
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SFP9640L
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
BVDSS
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage -200 -- --
Breakdown Voltage Temp. Coeff. -- -0.16 --
Gate Threshold Voltage
-1.0 -- -2.0
Gate-Source Leakage , Forward -- -- -100
Gate-Source Leakage , Reverse -- -- 100
--
Drain-to-Source Leakage Current
--
-- -10
-- -100
V
V/℃
V
nA
μA
VGS=0V,ID=-250μA
ID=-250μA See Fig 7
VDS=-5V,ID=-250μA
VGS=-20V
VGS=20V
VDS=-200V
VDS=-160V,TC=125℃
Static Drain-Source
On-State Resistance
-- -- 0.5 Ω VGS=-5V,ID=-5.5A ④
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 5.47 -- S VDS=-40V,ID=-5.5A ④
-- 1220 1585
-- 207 310 pF VGS=0V,VDS=-25V,f =1MHz
See Fig 5
-- 81 120
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 16 40
--
--
23 55
54 115
ns
VDD=-100V,ID=-11A,
RG=4.6Ω
See Fig 13 ④ ⑤
-- 19 50
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
-- 46 59
-- 9.2 --
-- 22.9 --
VDS=-160V,VGS=-5V,
nC ID=-11A
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
① --
-- -11
Integral reverse pn-diode
A
-- -44
in the MOSFET
④ -- -- -5.0 V TJ=25℃,IS=-11A,VGS=0V
-- 205 -- ns TJ=25℃,IF=-11A
-- 1.45 -- μC diF/dt=100A/μs
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=3mH, IAS=-11A, VDD=-50V, RG=27Ω, Starting TJ =25℃
③ ISD≤-11A, di/dt≤100A/μs, VDD≤BVDSS , Starting TJ =25℃
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
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