5P49V5901AXXXNLGI 查看數據表（PDF） - Integrated Device Technology
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5P49V5901AXXXNLGI Datasheet PDF : 37 Pages
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5P49V5901 DATASHEET
Table 10:Input Capacitance, LVCMOS Output Impedance, and Internal Pull-down
Resistance (TA = +25 °C)
Symbol
CIN
Parameter
Input Capacitance (CLKIN, CLKINB, CLKSEL, SD/OE,
SEL1/SDA, SEL0/SCL)
Min
Typ
Max
Unit
3
7
pF
CLKSEL, SD/OE, SEL1/SDA, SEL0/SCL, CLKIN, CLKINB,
Pull-down Resistor OUT0_SEL_I2CB
100
300
kΩ
ROUT
LVCMOS Output Driver Impedance (VDDO = 1.8V, 2.5V, 3.3V)
17
Ω
XIN/REF
Programmable capacitance at XIN/REF
9
25
pF
XOUT
Programmable capacitance at XOUT
9
25
pF
Table 11:Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Load Capacitance (CL) @ <=25 MHz
Load Capacitance (CL) >25M to 40M
Maximum Crystal Drive Level
Test Conditions
Minimum Typical Maximum
Fundamental
8
25
40
10
100
7
6
8
12
6
8
100
Units
MHz
Ω
pF
pF
pF
µW
Note: Typical crystal used is IDT 603-25-150 or FOX 603-25-150. For different reference crystal options please go to www.foxonline.com.
Table 12:DC Electrical Characteristics
Symbol
Iddcore3
Parameter
Core Supply Current
Test Conditions
100 MHz on all outputs, 25 MHz
REFCLK
Min
Typ
30
LVPECL, 350 MHz, 3.3V VDDOx
42
LVPECL, 350 MHz, 2.5V VDDOx
37
LVDS, 350 MHz, 3.3V VDDOx
18
LVDS, 350 MHz, 2.5V VDDOx
17
LVDS, 350 MHz, 1.8V VDDOx
16
HCSL, 250 MHz, 3.3V VDDOx, 2 pF load
29
Iddox
Output Buffer Supply Current
HCSL, 250 MHz, 2.5V VDDOx, 2 pF load
28
LVCMOS, 50 MHz, 3.3V, VDDOx 1,2
16
LVCMOS, 50 MHz, 2.5V, VDDOx 1,2
14
LVCMOS, 50 MHz, 1.8V, VDDOx 1,2
12
LVCMOS, 200 MHz, 3.3V VDDOx1
36
LVCMOS, 200 MHz, 2.5V VDDOx1,2
27
LVCMOS, 200 MHz, 1.8V VDDOx1,2
16
Iddpd
Power Down Current
SD asserted, I2C Programming
10
1. Single CMOS driver active.
2. Measured into a 5” 50 Ohm trace with 2 pF load.
3. Iddcore = IddA+ IddD, no loads.
Max
Unit
34
mA
47
mA
42
mA
21
mA
20
mA
19
mA
33
mA
33
mA
18
mA
16
mA
14
mA
42
mA
32
mA
19
mA
14
mA
REVISION G 07/07/15
13
PROGRAMMABLE CLOCK GENERATOR
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