IRFP350 查看數據表（PDF） - Intersil

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IRFP350

16A, 400V, 0.300 Ohm, N-Channel Power MOSFET

Intersil 

IRFP350

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFP350

400

400

16

10

64

±20

180

1.44

700

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250µA (Figure 10)

400

-

-

V

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero-Gate Voltage Drain Current

IDSS VDS = Rated BVDSS, VGS = 0V

-

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

-

-

250

µA

On-State Drain Current (Note 2)

ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)

16

-

-

A

Gate to Source Leakage Current

IGSS VGS = ±20V

-

-

±100

nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8.9A (Figures 8, 9)

- 0.250 0.300

Ω

Forward Transconductance (Note 2)

gfs

VDS = 2 x VGS, ID = 8.0A (Figure 12)

8.0

10

-

S

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

VDD = 200V, ID = 16A, RGS = 6.2Ω, VGS = 10V,

RL = 12.3Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-

12

18

ns

-

51

77

ns

-

75 110

ns

Fall Time

tf

-

47

71

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Qg

VGS = 10V, ID = 16A, VDS = 0.8 x Rated BVDSS.

-

IG(REF) = 1.5mA (Figure 14)

Qgs

Gate Charge is Essentially Independent of Operating

Temperature

-

Qgd

-

87 130

nC

10

-

nC

33

-

nC

Input Capacitance

CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

2000

-

pF

Output Capacitance

COSS

-

400

-

pF

Reverse-Transfer Capacitance

CRSS

-

100

-

pF

Internal Drain Inductance

LD

Measured Between the Modified MOSFET

Contact Screw on Header Symbol Showing the

that is Closer to Source Internal Devices

and Gate Pins and Center Inductances

of Die

D

-

5.0

-

nH

Internal Source Inductance

LS

Measured from the

LD

Source Lead, 6mm

(0.25in) From Header to

G

Source Bonding Pad

LS

-

12.5

-

nH

Junction to Case

Junction to Ambient

RθJC

RθJA

Free Air Operation

S

-

-

0.70 oC/W

-

-

30

oC/W

4-336

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