IRFP350 查看數據表（PDF） - Intersil
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IRFP350 Datasheet PDF : 7 Pages
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IRFP350
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
D
P-N Junction Diode
G
MIN TYP
-
-
-
-
MAX
16
64
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 16A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs
-
-
1.6
V
270
-
1300
ns
1.7
-
8.1
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25oC, L = 5.66mH, RG = 50Ω, peak IAS = 15A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
10-4
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC +TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-337
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