SGH10N120RUFD 查看數據表（PDF） - Fairchild Semiconductor
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SGH10N120RUFD Datasheet PDF : 8 Pages
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1500
1200 Cies
900
Common Emitter
V = 0V, f = 1MHz
GE
TC = 25℃
600
Coes
300 Cres
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 600V, VGE = ± 15V
I = 10A
C
T = 25℃
C
T = 125℃
C
100
tf
td(off)
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
100
Common Emitter
V = ± 15V, R = 25Ω
GE
G
TC = 25℃
tr
T = 125℃
C
td(on)
10
5
10
15
20
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
100
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 10A
C
T = 25℃
C
T = 125℃
C
tr
td(on)
10
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
V = 600V, V = ± 15V
CC
GE
IC = 10A
T = 25℃
C
T = 125℃
C
1000
Eoff
Eon
Eoff
10
100
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 25Ω
TC = 25℃
T = 125℃
C
100
tf
td(off)
5
10
15
20
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH10N120RUFD Rev. B2
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