SGH10N120RUFD 查看數據表（PDF） - Fairchild Semiconductor
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SGH10N120RUFD Datasheet PDF : 8 Pages
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Common Emitter
V = ± 15V, R = 25Ω
GE
G
T = 25℃
C
T = 125℃
Eoff
C
Eon
Eoff
1000
Eon
100
5
10
15
20
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14
R = 60Ω
L
T = 25℃
C
12
10
600V
400V
8
Vcc=200V
6
4
2
0
0
10
20
30
40
50
60
Gate Charge, Qg [nC]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
10
C
50µs
100µs
1ms
DC Operation
1
0.1 Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
Collector - Emitter Current, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-3
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH10N120RUFD Rev. B2
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