SD103AWS-E3-18 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

SD103AWS-E3-18

Small Signal Schottky Diodes

Vishay Semiconductors 

www.vishay.com

SD103AWS, SD103BWS, SD103CWS

Vishay Semiconductors

Small Signal Schottky Diodes

DESIGN SUPPORT TOOLS click logo to get started

Models

Available

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13” reel (8 mm tape), 10K/box

08/3K per 7” reel (8 mm tape), 15K/box

FEATURES

• The SD103 series is a metal-on-silicon

Schottky barrier device which is protected by

a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of MOS

devices, steering, biasing, and coupling

diodes for fast switching and low logic level

applications

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PARTS TABLE

PART

SD103AWS

SD103BWS

SD103CWS

ORDERING CODE

SD103AWS-E3-08 or SD103AWS-E3-18

SD103AWS-HE3-08 or SD103AWS-HE3-18

SD103BWS-E3-08 or SD103BWS-E3-18

SD103BWS-HE3-08 or SD103BWS-HE3-18

SD103CWS-E3-08 or SD103CWS-E3-18

SD103CWS-HE3-08 or SD103CWS-HE3-18

CIRCUIT

CONFIGURATION

Single

Single

Single

TYPE MARKING

S6

S7

S8

REMARKS

Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

Repetitive peak reverse voltage

Forward continuous current (1)

Power dissipation (1)

Single cycle surge

10 μs square wave

SD103AWS

SD103BWS

SD103CWS

VRRM

VRRM

VRRM

IF

Ptot

IFS;M

Note

(1) Valid provided that electrodes are kept at ambient temperature

VALUE

40

30

20

350

200

2

UNIT

V

V

V

mA

mW

A

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

Thermal resistance junction to ambient air (1)

Junction temperature

Operating temperature range

Storage temperature range

RthJA

Tj

Top

Tstg

Note

(1) Valid provided that electrodes are kept at ambient temperature

VALUE

500

125

-55 to +125

-55 to +150

UNIT

K/W

°C

°C

°C

Rev. 2.2, 01-Jun-17

1

Document Number: 85682

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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