SD103AWS-E3-18 查看數據表（PDF） - Vishay Semiconductors
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SD103AWS-E3-18 Datasheet PDF : 4 Pages
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www.vishay.com
SD103AWS, SD103BWS, SD103CWS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
SD103AWS
IR
VR = 20 V
SD103BWS
IR
VR = 10 V
SD103CWS
IR
IF = 20 mA
VF
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
100
100
10
10
1
1
Tamb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.1
0.1
0.01
0
0.2
0.4 0.6
0.8 1.0
18488
VF - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
100
4
tp = 300 ms
duty cycle = 2 %
3
10
2
1
0
0
0.5
1.0
1.5
18489
VF - Forward Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
1
0
10
20
30
40
50
18491
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.2, 01-Jun-17
2
Document Number: 85682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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