IRF230 查看數據表（PDF） - Semelab - > TT Electronics plc

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IRF230

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET

Semelab - > TT Electronics plc  

IRF230

TO–3 (TO–204AA) Package Outline.

Dimensions in mm (inches)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFET

1

2

Pin 1 – Gate

3

(case)

3.84 (0.151)

4.09 (0.161)

Pin 2 – Source

7.92 (0.312)

12.70 (0.50)

Case – Drain

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDS

Drain – Source Voltage1

VDGR

ID

ID

IDM

Drain - Gate Voltage (RGS = 20KW)1

Continuous Drain Current@ Tcase = 25°C

Continuous Drain Current@ Tcase = 100°C

Pulsed Drain Current 3

VGS

Gate – Source Voltage

PD

Maximum Power Dissipation @ Tcase = 25°C

Derate Linearly

ILM

Inductive Current Clamped

EAS*

Single Pulse Avalanche energy Rating 4

TJ , TSTG Operating and Storage Junction Temperature Range

TL

Lead Temperature : 0.063” from Case for 10 Sec.

200

V

200

V

9.0

A

6.0

A

36

A

±20

V

75

W

0.6 W/°C

36

A

150

mj

–55 to 150 °C

300

°C

THERMAL CHARACTERISTICS

Characteristic

RqJC

Junction to Case

RqCS

Case to Sink (Mounting Surface flat, smooth and greased.

RqJA

Junction to Ambient (Free air operation)

NOTES

1 TJ = +25°C to + 150°C

2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2%

3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.

4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Min.

Typ.

0.1

Max. Unit

1.67

°C/W

30

Prelim. 6/00

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