IRF230 查看數據表（PDF） - Semelab - > TT Electronics plc
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IRF230 Datasheet PDF : 2 Pages
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IRF230
ELECTRICAL (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain–Source Breakdown Voltage
VGS = 0V , ID = 250mA
VGS(TH) Gate Threshold Voltage
VDS = VGS , ID = 250mA
IGSS Gate Source Leakage forward
VGS = 20V
IGSS Gate Source Leakage Reverse
VGS = -20V
VDS = Max rating VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS = Max rating x0.8,
VGS=0V
TJ = +125°C
ID(ON)2 On-State Drain Current
VDS> ID(ON) xrDS(ON) Max.
VGS = 10V
rDS(ON)2 Static Drain–Source On State Resistance VGS = 10V , IDS = 5.0A
gts2
Forward Transconductance
VDS> 50V
ID =5.0A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V,
f = 1MHz
VDS = 25V
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
VGS = 10V
ID = 9A
VDS = 0.8 VMax
Turn–On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD•100V,
RG = 7.5W
ID = 5.0A,
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current (Body Diode) Modified MOSFET
symbol showing the integral
ISM
Pulsed Source Current1 (Body Diode) reverse P-N junc. rectifier.
VSD Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
tON
Forward Turn-on Time
PACKAGE CHARACTERISTICS
TJ = +25°C , IS = 9A
VGS = 0V
TJ = +150°C , IS = 9A
VGS = 0V dlF/dt = 100A/ms
TJ = +150°C , IS = 9A
VGS = 0V dlF/dt = 100A/ms
LD
Internal Drain Inductance
LS
Internal Source Inductance (from 6mm down source lead to source bond pad)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min. Typ. Max. Unit
200
V
2
4
V
100
nA
-100
250
mA
1000
9
A
0.25
0.4
W
3.0
4.8
S(W)
600
250
pF
80
19
30
10
nC
9.0
35
80 ns
60
40
9.0
A
36
2.0
V
450
ns
3.0
mC
NEGLIGIBLE
5.0
12.5
nH
Prelim. 6/00
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