IRF232 查看數據表（PDF） - Intersil

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IRF232

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

October 1997

IRF230, IRF231,

IRF232, IRF233

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm,

N-Channel Power MOSFETs

Features

• 8.0A and 9.0A, 150V and 200V

• rDS(ON) = 0.4Ω and 0.6Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF230

TO-204AA

IRF230

IRF231

TO-204AA

IRF231

IRF232

TO-204AA

IRF232

IRF233

TO-204AA

IRF233

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17412.

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1997

1

File Number 1568.2

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