IRF232 查看數據表（PDF） - Intersil
零件编号
产品描述 (功能)
比赛名单
IRF232 Datasheet PDF : 7 Pages
| |||
IRF230, IRF231, IRF232, IRF233
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
-
600
-
pF
-
250
-
pF
Reverse Transfer Capacitance
CRSS
-
80
-
pF
Internal Drain Inductance
LD Measured Between the Modified MOSFET
-
5.0
-
nH
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins Inductances
and the Center of Die
D
Internal Source Inductance
LS Measured From The
Source Lead, 6mm
G
(0.25in) From the Flange
and the Source Bonding
Pad
LD
LS
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
-
-
1.6 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD Modified MOSFET Sym-
bol Showing the Integral
D
Pulse Source to Drain Current
ISDM Reverse P-N Junction
(Note 3)
Diode
G
MIN TYP MAX UNITS
-
-
9.0
A
-
-
36
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 9.0A, VGS = 0V, (Figure 13)
-
Reverse Recovery Time
trr
TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs
-
Reverse Recovered Charge
QRR TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs
-
-
2.0
V
450
-
ns
3.0
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50Ω, peak IAS = 9A. See Figures 15, 16.
3
Share Link: 