BLS3135-50 查看數據表（PDF） - Philips Electronics
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BLS3135-50 Datasheet PDF : 8 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
BLS3135-50
FEATURES
• Suitable for short and medium pulse applications
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN
DESCRIPTION
1
collector
2
emitter
3
base; connected to flange
handbook, halfpage
3
1
3
2
MBK051
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
VCB
(V)
PL
(W)
Pulsed, class-C
3.1 to 3.5
40
50
Gp
(dB)
typ. 8
ηC
(%)
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Aug 16
2
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