BLS3135-50 查看數據表（PDF） - Philips Electronics
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BLS3135-50 Datasheet PDF : 8 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
ICM
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
CONDITIONS
open emitter
RBE = 0
open collector
tp ≤ 100 µs; δ ≤ 10%
tp = 100 µs; δ = 10%; Tmb = 25 °C
up to 0.2 mm from ceramic cap;
t ≤ 10 s
MIN.
−
−
−
−
−
−65
−
−
MAX.
75
75
2
6
80
+200
200
235
UNIT
V
V
V
A
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Zth j-h
thermal impedance from junction to heatsink
tp = 100 µs; δ = 10%; note 1
tp = 300 µs; δ = 10%; note 1
0.71 K/W
0.99 K/W
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm
spotsize at hotspot.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CES
ICBO
ICES
IEBO
hFE
collector-base breakdown voltage
collector-emitter breakdown voltage
collector leakage current
collector leakage current
emitter leakage current
DC current gain
IC = 15 mA; open emitter
IC = 15 mA; VBE = 0
VCB = 40 V; IE = 0
VCE = 40 V; VBE = 0
VEB = 1.5 V; IC = 0
VCB = 5 V; IC = 1.5 A
MIN.
75
75
−
−
−
40
MAX.
−
−
1.5
3
0.3
−
UNIT
V
V
mA
mA
mA
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
Class-C; tp = 100 µs; δ = 10% 3.1 to 3.5
40
PL
(W)
≥50
typ. 55
Gp
(dB)
≥7
typ. 8
ηC
(%)
≥35
typ. 40
1999 Aug 16
3
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