BTS410E2 查看數據表（PDF） - Infineon Technologies

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BTS410E2

Smart Highside Power Switch

Infineon Technologies 

PROFET® BTS 410 E2

Smart Highside Power Switch

Features

• Overload protection

• Current limitation

Product Summary

Overvoltage protection

Vbb(AZ)

• Short circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection1)

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

Vbb(on)

RON

IL(ISO)

IL(SCr)

• Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

• Open drain diagnostic output

TO-220AB/5

• Open load detection in ON-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

5

5

Standard

1

Straight leads

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitve loads

• Replaces electromechanical relays, fuses and discrete circuits

65 V

4.7 ... 42 V

220 mΩ

1.8 A

5A

5

1

SMD

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

2 IN

Voltage

source

V Logic

Voltage

sensor

ESD

4 ST

Logic

Overvoltage

protection

Current

limit

Gate

protection

+ Vbb 3

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Open load

detection

OUT

5

Temperature

sensor

Load

Short circuit

detection

GND

1

Signal GND

PROFET

Load GND

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST

connections, reverse load current limited by connected load.

Semiconductor Group

1 of 16

2003-Oct-01

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