BTS410E2 查看數據表（PDF） - Infineon Technologies

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BTS410E2

Smart Highside Power Switch

Infineon Technologies 

Parameter and Conditions

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Symbol

Protection Functions9)

Initial peak short circuit current limit (pin 3 to 5)10),

( max 450 µs if VON > VON(SC) )

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

Repetitive overload shutdown current limit

VON= 8 V, Tj = Tjt (see timing diagrams, page 11)

Short circuit shutdown delay after input pos. slope

VON > VON(SC),

Tj =-40..+150°C:

min value valid only, if input "low" time exceeds 60 µs

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:

IL= 1 A, Tj =-40..+150°C:

Short circuit shutdown detection voltage

(pin 3 to 5)

Thermal overload trip temperature

Thermal hysteresis

Reverse battery (pin 3 to 1) 11)

IL(SCp)

IL(SCr)

td(SC)

VON(CL)

VON(SC)

Tjt

∆Tjt

-Vbb

BTS 410 E2

Values

Unit

min typ max

9

-- 23 A

-- 12

--

4

-- 15

--

5

-- A

--

-- 450 µs

61 68

--

--

-- 8.5

150

--

-- 10

--

--

73 V

75

-- V

-- °C

-- K

32 V

Diagnostic Characteristics

Open load detection current

(on-condition)

IL (OL)

Tj=-40 ..150°C:

mA

2

-- 150

8) Add IST, if IST > 0, add IIN, if VIN>5.5 V

9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

10) Short circuit current limit for max. duration of td(SC) max=450 µs, prior to shutdown

11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 2 and circuit page 7).

Semiconductor Group

4

2003-Oct-01

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