C67078-S 查看數據表（PDF） - Infineon Technologies
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C67078-S Datasheet PDF : 8 Pages
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Preliminary data
BUZ 101SL-4
Thermal Characteristics
Parameter
Thermal resistance, junction - soldering point 1)
Thermal resistance, junction - ambient 2)
Symbol
Values
Unit
min. typ. max.
RthJS -
-
tbd K/W
RthJA -
-
62.5
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 30 µA
Zero gate voltage drain current
VDS = 55 V, VGS = 0 V, Tj = -40 °C
VDS = 55 V, VGS = 0 V, Tj = 25 °C
VDS = 55 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 4.1 A
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
55
VGS(th)
1.2
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
-
-
1.6
-
0.1
-
10
0.06
2
µA
0.1
1
100
nA
100
Ω
0.075
Semiconductor Group
2
02/Oct/1997
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