C67078-S 查看數據表（PDF） - Infineon Technologies

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C67078-S

SIPMOS ® Power Transistor

Infineon Technologies 

Preliminary data

BUZ 101SL-4

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TA = 25 °C

-

Inverse diode direct current, pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 8.2 A

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

-

-

0.95

50

80

A

4.1

16.4

V

1.6

ns

75

nC

120

Semiconductor Group

4

02/Oct/1997

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