BUK7507-30B 查看數據表（PDF） - Philips Electronics
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BUK7507-30B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
peak reverse drain current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Tmb = 25 °C; pulsed; tp ≤ 10 µs
unclamped inductive load; ID = 75 A;
VDS ≤ 30 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min
-
-
-
[1] -
[2] -
[2] -
-
-
−55
−55
[1] -
[2] -
-
-
Max Unit
30
V
30
V
±20
V
108
A
75
A
75
A
435
A
157
W
+175 °C
+175 °C
108
A
75
A
435
A
329
mJ
9397 750 11232
Product data
Rev. 01 — 07 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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