CXD2312 查看數據表（PDF） - Sony Semiconductor
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CXD2312 Datasheet PDF : 16 Pages
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CXD2312R
Electrical Characteristics
Item
Max. conversion rate
Min. conversion rate
Supply
current
Analog
Digital
Standby
current
Analog
Digital
Reference pin current
Analog input band
Analog input capacitance
Reference resistance value
(VRT – VRB)
(Fc = 20MSPS, AVDD = 5V, DVDD = 3.3V, VRB = 2.0V, VRT = 4.0V, Ta = 25°C)
Symbol
Conditions
Min. Typ. Max. Unit
Fc max FIN = 1.0kHz
20
Fc min triangular wave input
MSPS
0.5
IADD
IDDD
FIN = 1.0kHz
triangular wave input
21
24
28
1.6
1.7
1.8
mA
IAST
IDST
CE = High
1.0
1.0
µA
IRT
IRB
BW
–1dB
5.0
7.5 10.0
mA
3.0
5.5
8.0
35
MHz
CIN
10
pF
RREF
210
300
390
Ω
Offset voltage
EOT
EOT = theoretical value-actual –30
8.0
30
measured value
EOB = actual measured value-
mV
EOB
theoretical value
–30
12
30
Startup calibration start
voltage
Digital input voltage
Analog input current
Digital input current
Digital output current
Digital output current
VCAL1
VCAL2
VIH
VIL
AIH
AIL
IIH
IIL
IOH
IOL
IOZH
IOZL
Tri-state output disable time tPEZ
Tri-state output enable time tPZE
Integral non-linearity error EL
Differential non-linearity error ED
Differential gain error
DG
Differential phase error
DP
Output data delay
tDL
Sampling delay
tSH
tSL
AVDD – AVSS
VRT – VRB
2.3
AVDD = 4.75V to 5.25V
VIN = 4V
VIN = 2V
–10
VIH = DVDD
DVDD = max
VIL = 0V
OE = AVSS VOH = DVDD – 0.5V 4.0
DVDD = min VOH = 0.4V
3.5
OE = AVDD VOH = DVDD
DVDD = max VOL = 0V
Clock not synchronized for
active → high impedance
20
Clock not synchronized for high
impedance → active
10
NTSC 40 IRE mod
ramp, Fc = 14.3MSPS
CL = 20pF
8
0
2.5
V
1.0
V
0.8
20
µA
5
µA
5
mA
1
µA
1
25
30
ns
15
20
ns
±0.5 ±1.0
LSB
±0.3 ±0.5
1.0
%
0.3
deg
13
18
ns
6
ns
2
4
–7–
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