CXD1803AR 查看數據表（PDF） - Sony Semiconductor
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CXD1803AR Datasheet PDF : 46 Pages
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CXD1803AQ/AR
Electrical Characteristics
DC Characteristics
(VDD = 5 V ± 10%, VSS = 0 V, Topr = –20 - 75°C)
Item
TTL input level pin ∗1
High level input voltage
TTL input level pin ∗1
Low level input voltage
CMOS input level pin ∗2
High level input voltage
CMOS input level pin ∗2
Low level input voltage
CMOS Schmitt input level pin ∗3
High level input voltage
CMOS Schmitt input level pin ∗3
Low level input voltage
CMOS Schmitt input level pin ∗3
Input voltage hysteresis
TTL Schmitt input level pin ∗4
High level input voltage
TTL Schmitt input level pin ∗4
Low level input voltage
TTL Schmitt input level pin ∗4
Input voltage hysteresis
Bidirectional pin with pull-up resistor ∗5
Input current
Pin with pull-up resistor ∗6
Input current
High level output voltage ∗7
Low level output voltage ∗7
Input leakage current ∗8
Symbol
VIH1
VIL1
VIH2
VIL2
VIH4
VIL4
VIH4 to VIL4
VIH5
VIL5
VIH4 to VIL4
IIL3
IIL4
VOH1
VOL1
II1
Output leakage current ∗9
Oscillation cell ∗10 high level input voltage
Oscillation cell low level input voltage
Oscillation cell logic threshold value
Oscillation cell feedback resistance value
Oscillation cell
High level output voltage
Oscillation cell
Low level output voltage
IOZ
VIH4
VIL4
LVTH
RFB
VOH2
VOL2
Conditions
VIN=0V
VIN=0V
IOH=–2mA
IOL=–4mA
VIN=VSS
or VDD
High-impedance
state
VIN=VSS
or VDD
IOH=–3mA
IOL=3mA
Min.
2.2
0.7VDD
0.8VDD
2.2V
–90
–40
VDD-0.8
–10
–40
0.7VDD
250K
0.5VDD
Typ.
0.6
0.4
–200
–100
0.5VDD
1M
Max. Unit
V
0.8
V
V
0.3VDD V
V
0.2VDD V
V
V
0.8V V
V
–440 µA
–240 µA
V
0.4
V
10
µA
40
µA
V
0.3VDD V
V
2.5M Ω
V
0.5VDD V
—6—
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