STB85NF55 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

比赛名单

STB85NF55

N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB/I/P85NF55

(TCASE= 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

55

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

1 µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

0.0062 0.008 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15 V, ID = 40 A

VDS =25 V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 60 V, ID = 80 A

VGS =10 V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

120

S

3700

pF

-

900

pF

310

pF

120 150 nC

-

30

nC

45

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD= 30 V, ID= 40 A,

RG=4.7 Ω, VGS=10 V

Figure 14 on page 8

Min. Typ. Max. Unit

25

ns

100

ns

-

-

70

ns

35

ns

4/15

Doc ID 8405 Rev 9

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