STB85NF55 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

STB85NF55

N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB/I/P85NF55

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD Source-drain current

-

ISDM(1) Source-drain current (pulsed)

-

VSD(2) Forward on voltage

ISD = 80 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A,

di/dt = 100 A/µs,

-

VDD = 25 V, TJ = 150 °C

Figure 16 on page 8

80 A

320 A

1.5 V

75

ns

210

nC

5.5

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Doc ID 8405 Rev 9

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