GP801DDM18 查看數據表（PDF） - Dynex Semiconductor
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GP801DDM18 Datasheet PDF : 11 Pages
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GP800DDM12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T = 25˚C unless stated otherwise
case
Symbol
Parameter
Test Conditions
V
CES
VGES
I
C
IC(PK)
Pmax
Visol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Continuous collector current
T = 80˚C
case
Peak collector current
1ms, Tcase = 105˚C
Max. transistor power dissipation
T = 25˚C, T = 150˚C
case
j
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20 V
800 A
1600 A
6490 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R
th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
18 ˚C/kW
-
40 ˚C/kW
-
8 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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