GP801DDM18 查看數據表（PDF） - Dynex Semiconductor

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GP801DDM18

Hi-Reliability Dual Switch IGBT Module

Dynex Semiconductor 

GP800DDM12

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

ICES

Collector cut-off current

IGES

V

GE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

I

Diode maximum forward current

FM

VF

Diode forward voltage

C

Input capacitance

ies

LM

Module inductance

Test Conditions

VGE = 0V, VCE = VCES

V = 0V, V = V , T = 125˚C

GE

CE

CES case

VGE = ±20V, VCE = 0V

IC = 120mA, VGE = VCE

VGE = 15V, IC = 800A

V = 15V, I = 800A, , T = 125˚C

GE

C

case

DC, Tcase = 50˚C

tp = 1ms

IF = 800A

IF = 800A, Tcase = 125˚C

V = 25V, V = 0V, f = 1MHz

CE

GE

-

Min. Typ. Max. Units

-

-

1

mA

-

-

50 mA

-

-

±4 µA

4

-

7.5

V

-

2.7

3.5

V

-

3.2

4

V

-

-

800 A

-

-

1600 A

-

2.2

2.4

V

-

2.3

2.5

V

-

90

-

nF

-

20

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

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