NE960R200 查看數據表（PDF） - NEC => Renesas Technology
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NE960R200 Datasheet PDF : 12 Pages
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NE960R2 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
–7
V
Drain Current
ID
0.35
A
Gate Forward Current
IGF
+2.5
mA
Gate Reverse Current
IGR
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
–2.5
mA
2.5 (2.1Note)
W
175
°C
–65 to +175
°C
Note NE961R200
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Condition
MIN.
−
−
−
TYP.
9.0
−
−
MAX.
Unit
9.0
V
3.0
dB
+130
°C
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Unless otherwise specified, using NEC standard test fixture.)
Parameter
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Symbol
IDSS
Vp
BVgd
Test Conditions
VDS = 1.5 V, VGS = 0 V
VDS = 2.5 V, ID = 1 mA
Igd = 1 mA
Rth
Channel to Case
MIN.
0.09
–2.5
15
−
Output Power at Pin = +15 dBm
Output Power at 1 dB Gain
Compression Point
Power Added Efficiency at
PO (1dB)
Linear Gain
Pout
Po (1 dB)
η add
f = 14.5 GHz, VDS = 9.0 V
Rg = 1 kΩ
IDset = 90 mA (RF OFF)
GL
22.0
−
−
8.0
TYP.
0.2
–1.8
−
−
24.0
25.0
35
10.0
MAX.
Unit
0.35
A
–0.5
V
−
V
60
(70Note)
−
−
°C/W
dBm
dBm
−
%
−
dB
Note NE961R200
Remark DC and RF performance is 100 % testing.
2
Preliminary Data Sheet P13775EJ2V0DS00
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