2115M-1.2G1 查看數據表（PDF） - BCD Semiconductor

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2115M-1.2G1

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE

BCD Semiconductor 

Preliminary Datasheet

1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115

Electrical Characteristics (Continued)

AP2115-3.3 Electrical Characteristics (Note 2)

VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC

ranges, unless otherwise specified (Note 3).

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Voltage

VOUT

VIN =4.3V, 1mA ≤ IOUT ≤ 30mA

Maximum Output Current

Load Regulation

Line Regulation

Dropout Voltage

IOUT(MAX)

△VOUT/VOUT

△IOUT

△VOUT/VOUT

△VIN

VDROP

Quiescent Current

IQ

Power Supply Rejection

Ratio

PSRR

Output Voltage

Temperature Coefficient

△VOUT/VOUT

△T

Short Current Limit

ISHORT

RMS Output Noise

VNOISE

VEN High Voltage

VIH

VEN Low Voltage

VIL

Standby Current

ISTD

Start-up Time

EN Pull Down Resistor

VOUT Discharge Resistor

Thermal

Temperature

Thermal

Hysteresis

Shutdown

Shutdown

tS

RPD

RDCHG

TOTSD

THYOTSD

Thermal Resistance

θJC

VIN =4.3V, VOUT=3.25V to 3.35V

VIN=4.3V, 1mA ≤ IOUT ≤1A

4.3V≤VIN≤6V, IOUT=30mA

IOUT=1A

VIN=4.3V, IOUT=0mA

Ripple 1Vp-p

VIN=4.3V,

IOUT=100mA

f=100Hz

f=1KHz

IOUT=30mA

VOUT=0V

10Hz ≤ f ≤100kHz (No load)

Enable logic high, regulator on

Enable logic low, regulator off

VIN=3.5V, VEN in OFF mode

No Load

Set EN pin at Low

SOIC-8

SOT-89-5

98.5%

×VOUT

3.3 101.5%

×VOUT

V

1

A

0.2

1 %/A

-0.1 0.02 0.1 %/V

450 750 mV

65 90 µA

65

dB

65

±30

ppm/°C

50

mA

30

µVRMS

1.5

V

0.4

0.01 1.0 µA

20

µs

3.0

MΩ

60

Ω

160

°C

25

74.6

°C/W

47

Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input

voltage must be applied before a current source load is applied.

Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.

Jul. 2011 Rev 1. 1

BCD Semiconductor Manufacturing Limited

9

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