CA3127M 查看數據表（PDF） - Renesas Electronics
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CA3127M Datasheet PDF : 9 Pages
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CA3127
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V
Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V
Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to 125°C
Thermal Resistance (Typical, Note 2)
JA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Maximum Power Dissipation, PD (Any One Transistor) . . . . .85mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected to
the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Magnitude of Difference in VBE
Magnitude of Difference in IB
DYNAMIC CHARACTERISTICS
IC = 10A, IE = 0
IC = 1mA, IB = 0
IC1 = 10A, IB = 0, IE = 0
IE = 10A, IC = 0
VCE = 10V IB = 0
VCB = 10V, IE = 0
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
IC = 10mA, IB = 1mA
Q1 and Q2 Matched
VCE = 6V, IC = 1mA
20
32
-
V
15
24
-
V
20
60
-
V
4
5.7
-
V
-
-
0.5
A
-
-
40
nA
35
88
-
40
90
-
35
85
-
0.71
0.81
0.91
V
0.66
0.76
0.86
V
0.60
0.70
0.80
V
-
0.26
0.50
V
-
0.5
5
mV
-
0.2
3
A
Noise Figure
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
Power Gain
Noise Figure
f = 100kHz, RS = 500, IC = 1mA
VCE = 6V, IC = 5mA
VCB = 6V, f = 1MHz
VCI = 6V, f = 1MHz
VBE = 4V, f = 1MHz
VCE = 6V, f = 10MHz, RL = 1k, IC = 1mA
Cascode Configuration
f = 100MHz, V+ = 12V, IC = 1mA
-
2.2
-
-
1.15
-
-
See Fig.
-
-
5
-
-
-
-
28
-
27
30
-
-
3.5
-
dB
GHz
pF
pF
pF
dB
dB
dB
FN662 Rev.5.00
Jun 5, 2006
Page 2 of 9
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