CA3127M 查看數據表（PDF） - Renesas Electronics

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CA3127M

High Frequency NPN Transistor Array

Renesas Electronics 

CA3127

Typical Performance Curves (Continued)

TA = 25°C

VCE = 6V

1.2

1.1

1.0

0.9

0.8

0

12

3456

78

9 10

COLLECTOR CURRENT (mA)

FIGURE 6. GAIN-BANDWIDTH PRODUCT vs COLLECTOR

CURRENT

TA = 25°C

f = 1MHz

2.25

2.00

1.75

CCI

1.50

1.25

1.00

0.75

0.50

CEB

0.25

CCB

0 1 2 3 4 5 6 7 8 9 10

BIAS VOLTAGE (V)

FIGURE 8A. CAPACITANCE vs BIAS VOLTAGE FOR Q2

1.0

TA = -55°C

0.9

0.8

TA = 25°C

0.7

TA = 125°C

0.6

0.5

0.4

0.1

1

10

COLLECTOR CURRENT (mA)

FIGURE 7. BASE-TO-EMITTER VOLTAGE vs COLLECTOR

CURRENT

CAPACITANCE (pF)

TRAN-

SISTOR

CCB

CCE

CEB

CCI

PKG TOTAL PKG TOTAL PKG TOTAL PKG TOTAL

BIAS - 6V - 6V - 4V - 6V

(V)

Q1 0.025 0.190 0.090 0.125 0.365 0.610 0.475 1.65

Q2 0.015 0.170 0.225 0.265 0.130 0.360 0.085 1.35

Q3 0.040 0.200 0.215 0.240 0.360 0.625 0.210 1.40

Q4 0.040 0.190 0.225 0.270 0.365 0.610 0.085 1.25

Q5 0.010 0.165 0.095 0.115 0.140 0.365 0.090 1.35

FIGURE 8B. TYPICAL CAPACITANCE VALUES AT f = 1MHz.

THREE TERMINAL MEASUREMENT. GUARD ALL

TERMINALS EXCEPT THOSE UNDER TEST.

FN662 Rev.5.00

Jun 5, 2006

Page 5 of 9

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