2N3226 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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比赛名单

2N3226

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0 V(Max)@ IC = 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 35V(Min)

APPLICATIONS

·Designed for power amplifier and switching circuits

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

35

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25℃

75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.17 ℃/W

SPTECH website：www.superic-tech.com

2N3226

1

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