2N3226 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
零件编号
产品描述 (功能)
比赛名单
2N3226 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 35V; IB= 0
ICBO
Collector Cutoff Current
VCB= 35V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
2N3226
MIN MAX UNIT
35
V
1.0
V
2.0
V
2.0
V
1.0 mA
0.1 mA
0.1 mA
40
20
SPTECH website：www.superic-tech.com
2
Share Link: 