AS6C3216A-55BIN 查看數據表（PDF） - Alliance Semiconductor

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AS6C3216A-55BIN

2048K x 16bit Low Power CMOS SRAM

Alliance Semiconductor 

AS6C3216A-55BIN

FEATURE

n Fast access time : 55ns

n Low power consumption:

Operating current : 12mA (TYP.)

Standby current : 8µA (TYP.)

n Single 2.7V ~ 3.6V power supply

n All inputs and outputs TTL compatible

n Fully static operation

n Tri-state output

n Data byte control : LB# (DQ0 ~ DQ7)

UB# (DQ8 ~ DQ15)

n Data retention voltage : 1.2V (MIN.)

n ROHS Compliant

n Package : 48-ball 8mm x 10mm TFBGA

PRODUCT FAMILY

Product

Operating

Family

Temperature

AS6C3216A-55BIN -40 ~ 85℃

VCC Range

2.7 ~ 3.6V

FUNCTIONAL BLOCK DIAGRAM

Vcc

Vss

A0-A20

DECODER

2048Kx16

MEMORY ARRAY

DQ0-DQ7

Lower Byte

DQ8-DQ15

Upper Byte

I/O DATA

CIRCUIT

COLUMN I/O

GENERAL DESCRIPTION

The AS6C3216A-55BIN is a 33,554,432-bit low

power CMOS static random access memory

organized as 2,097,152 words by 16 bits. It is

fabricated using very high performance, high

reliability CMOS technology. Its standby current is

stable within the range of operating temperature.

The AS6C3216A-55BIN is well designed for low

power application, and particularly well suited for

battery back-up nonvolatile memory application.

The AS6C3216A-55BIN operates from a single

power supply of 2.7V ~ 3.6V and all inputs and

outputs are fully TTL compatible

Speed

55ns

Power Dissipation

Standby(ISB1,TYP.) Operating(ICC,TYP.)

8µA

12mA

PIN DESCRIPTION

SYMBOL

A0 - A20

DQ0 - DQ15

CE#, CE2

WE#

OE#

LB#

UB#

VCC

VSS

NC

DESCRIPTION

Address Inputs

Data Inputs/Outputs

Chip Enable Input

Write Enable Input

Output Enable Input

Lower Byte Control

Upper Byte Control

Power Supply

Ground

No Connection

CE#

CE2

WE#

OE#

LB#

UB#

CONTROL

CIRCUIT

Confidential

- 2 of 11 -

Rev.1.0 June 2017

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