IRF6613PBF 查看數據表（PDF） - International Rectifier
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IRF6613PBF Datasheet PDF : 9 Pages
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IRF6613PbF
1000.0
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
150
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0
1
1msec
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
120
2.0
90
1.5
ID = 250µA
60
1.0
30
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4
ττCAτ
Ri (°C/W)
0.6784
17.299
τ4 τ4
17.566
τi (sec)
0.00086
0.57756
8.94
9.4701 106
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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